APTM10UM02FAG - Microchip Technology

Manufacturer Part Number

APTM10UM02FAG

Manufacturer

Microchip Technology

Introduction

High-power N-Channel MOSFET with ultra-low on-resistance for efficient power switching applications.

Product Features and Performance

Extremely low on-resistance of 2.5 mOhm at 200 A, 10V

High current capability of 570 A at 25°C

Wide operating temperature range of -40°C to 150°C

Low input capacitance of 40,000 pF at 25 V

High power dissipation of 1660 W at Tc

Product Advantages

Excellent performance for high-power switching applications

Efficient power conversion with low conduction losses

Wide temperature range for use in demanding environments

Compact design with high power density

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100 V

Gate-to-Source Voltage (Vgs): ±30 V

Threshold Voltage (Vgs(th)): 4 V at 10 mA

Gate Charge (Qg): 1360 nC at 10 V

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for long-term operation

Compatibility

Suitable for a wide range of high-power switching applications

Application Areas

Power supplies

Motor drives

Industrial automation

Renewable energy systems

Automotive electronics

Product Lifecycle

Currently available

No known plans for discontinuation

Several Key Reasons to Choose This Product

Exceptional performance with ultra-low on-resistance

High current capability and power handling

Wide operating temperature range for versatile applications

Efficient power conversion with low conduction losses

Compact and reliable design for long-term use