Manufacturer Part Number
APTM100A13DG
Manufacturer
Microchip Technology
Introduction
High-performance discrete MOSFET transistor array suitable for industrial and power conversion applications.
Product Features and Performance
2 N-Channel (Half Bridge) configuration
1000V (1kV) Drain to Source Voltage (Vdss)
156mOhm Rds On (Max) @ 32.5A, 10V
65A Continuous Drain Current (Id) @ 25°C
15200pF Input Capacitance (Ciss) (Max) @ 25V
562nC Gate Charge (Qg) (Max) @ 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Power Handling: 1250W
Product Advantages
High power density and efficiency
Suitable for industrial and power conversion applications
Robust and reliable performance
Key Technical Parameters
MOSFET (Metal Oxide) technology
Chassis Mount packaging
RoHS3 Compliant
Quality and Safety Features
Robust and reliable construction
Compliance with RoHS standards
Compatibility
Suitable for a wide range of industrial and power conversion applications
Application Areas
Industrial equipment
Power conversion systems
Motor drives
Renewable energy systems
Product Lifecycle
Currently available
No plans for discontinuation known
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High power handling and efficiency
Reliable and robust performance
Suitable for a wide range of industrial and power conversion applications
Compliance with RoHS standards