Manufacturer Part Number
APTM100UM65SAG
Manufacturer
Microchip Technology
Introduction
High-voltage N-channel power MOSFET with excellent RDS(on) performance and high current capability.
Product Features and Performance
Extremely low on-resistance (RDS(on)) of 78 mΩ at 72.5 A, 10 V
High current rating of 145 A at 25°C case temperature
Very high voltage rating of 1000 V drain-to-source
Wide operating temperature range of -40°C to 150°C
Low gate charge (Qg) of 1068 nC at 10 V
High input capacitance (Ciss) of 28,500 pF at 25 V
Product Advantages
Excellent RDS(on) performance for high efficiency
High current handling capability
Wide voltage and temperature operating range
Suitable for high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000 V
Gate-to-Source Voltage (Vgs): ±30 V
Drain Current (Id): 145 A at 25°C case temperature
On-Resistance (RDS(on)): 78 mΩ at 72.5 A, 10 V
Input Capacitance (Ciss): 28,500 pF at 25 V
Gate Charge (Qg): 1068 nC at 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for Chassis Mount applications
Compatibility
General-purpose high-voltage N-channel power MOSFET
Application Areas
High-power switching applications
Power converters
Motor drives
Industrial electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent RDS(on) performance for high efficiency
High current handling capability
Wide voltage and temperature operating range
Suitable for a variety of high-power switching applications
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