Manufacturer Part Number
APTM10AM02FG
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
2 N-Channel (Half Bridge) Configuration
MOSFET (Metal Oxide) Technology
Max Power: 1250W
Drain to Source Voltage (Vdss): 100V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Current Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Product Advantages
High power handling capability
Low on-resistance
High current rating
Wide operating temperature range
Key Technical Parameters
Manufacturer's Packaging: SP6
Base Product Number: APTM10
Package / Case: SP6
Supplier Device Package: SP6
Package: Bulk
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of applications
Application Areas
Suitable for power electronics, motor control, and other high-power applications
Product Lifecycle
Currently available, no known discontinuation plans
Several Key Reasons to Choose This Product
High power density and efficiency
Robust design for reliable performance
Wide operating temperature range
Easy integration and scalability
Compliance with RoHS3 regulations
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