Manufacturer Part Number
APTM20UM03FAG
Manufacturer
Microchip Technology
Introduction
High-performance N-channel power MOSFET with low on-resistance and high current capability.
Product Features and Performance
Very low on-resistance of 3.6 mΩ at 290 A, 10 V
Continuous drain current of 580 A at 25°C case temperature
Drain-source voltage up to 200 V
Operating temperature range from -40°C to 150°C
Input capacitance of 43,300 pF at 25 V
Maximum power dissipation of 2270 W at 25°C case temperature
Product Advantages
Excellent conduction efficiency due to ultra-low on-resistance
High current handling capability
Wide operating temperature range
Suitable for high-power, high-efficiency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200 V
Gate-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 3.6 mΩ at 290 A, 10 V
Continuous Drain Current (Id): 580 A at 25°C
Input Capacitance (Ciss): 43,300 pF at 25 V
Power Dissipation (Ptot): 2270 W at 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Suitable for chassis mount applications
Compatibility
Can be used in a wide range of high-power, high-efficiency applications, such as motor drives, power supplies, and industrial automation systems.
Application Areas
Motor drives
Power supplies
Industrial automation
High-power, high-efficiency systems
Product Lifecycle
This product is currently in production and available for purchase. There are no known plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High current handling capability for high-power applications
Wide operating temperature range for reliable performance
RoHS3 compliance for environmental responsibility
Suitable for chassis mount applications for easy integration