APTM100A13SG - Microchip Technology

Manufacturer Part Number

APTM100A13SG

Manufacturer

Microchip Technology

Introduction

The APTM100A13SG is a high-performance discrete semiconductor product, specifically a transistor in the form of a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) array.

Product Features and Performance

2 N-Channel MOSFET (Half Bridge) configuration

Drain to Source Voltage (Vdss) of 1000V (1kV)

Rds On (Max) of 156mOhm @ 32.5A, 10V

Continuous Drain Current (Id) of 65A @ 25°C

Input Capacitance (Ciss) of 15200pF @ 25V

Gate Threshold Voltage (Vgs(th)) of 5V @ 6mA

Gate Charge (Qg) of 562nC @ 10V

Operating Temperature range of -40°C to 150°C (TJ)

Power rating of 1250W

Product Advantages

High voltage and current handling capabilities

Low on-resistance for improved efficiency

Wide operating temperature range

Compact and efficient package design

Key Technical Parameters

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

2 N-Channel (Half Bridge) configuration

Drain to Source Voltage (Vdss) of 1000V (1kV)

Rds On (Max) of 156mOhm @ 32.5A, 10V

Continuous Drain Current (Id) of 65A @ 25°C

Quality and Safety Features

RoHS3 compliant

Chassis mount package design for improved thermal management

Compatibility

Suitable for a wide range of power electronics and industrial applications

Application Areas

Power conversion and control systems

Inverters and motor drives

Renewable energy systems

Industrial automation and control

Product Lifecycle

This product is currently in active production and availability.

Replacements or upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

High voltage and current handling capabilities for demanding applications

Low on-resistance for improved efficiency and reduced power losses

Wide operating temperature range for versatile deployment

Compact and efficient package design for easy integration

RoHS3 compliance for environmentally-friendly use