Manufacturer Part Number
TC58BVG2S0HTA00
Manufacturer
Toshiba Memory America
Introduction
The TC58BVG2S0HTA00 is a high-performance NAND FLASH memory from Toshiba's Benand™ series, designed for robust data storage applications.
Product Features and Performance
Non-Volatile FLASH memory
Utilizes NAND technology with Single-Level Cell (SLC) design
Parallel memory interface for fast data access and processing
Write Cycle Time and Access Time of 25 ns
Product Advantages
Enhanced durability and reliability with SLC technology
High-speed write and access capabilities for efficient performance
Key Technical Parameters
Memory Type: FLASH - NAND (SLC)
Memory Size: 4Gbit
Memory Organization: 512M x 8
Voltage Supply: 2.7V to 3.6V
Operating Temperature: 0°C to 70°C
Quality and Safety Features
Robust SLC NAND technology ensures longevity and data integrity
Operates within a standard temperature range ensuring stability
Compatibility
Mounting Type: Surface Mount
Package / Case: 48-TFSOP
Compatible with devices requiring a 48-TSOP I type package
Application Areas
Ideal for data storage in computing and electronic devices
Suitable for applications necessitating high-speed and reliable memory storage
Product Lifecycle
Currently active product status
Not nearing discontinuation
Continued manufacturer support and availability
Several Key Reasons to Choose This Product
High reliability and data retention with SLC NAND FLASH
Extended operational temperature range of 0°C ~ 70°C
Efficient in power usage ranging between 2.7V and 3.6V
Broad compatibility with standard surface mount setups
Rapid data processing with 25 ns access and write times