TC58BYG1S3HBAI4 - Kioxia America, Inc.

Manufacturer Part Number

TC58BYG1S3HBAI4

Manufacturer

Toshiba Memory America

Introduction

The TC58BYG1S3HBAI4 is a high-capacity, high-performance NAND flash memory chip from Toshiba Memory America. It offers a storage capacity of 2Gbit organized in a 256M x 8 configuration. This product is suitable for a wide range of applications that require non-volatile memory with fast read/write speeds and efficient power consumption.

Product Features and Performance

2Gbit NAND flash memory

256M x 8 memory organization

25ns write cycle time (word/page)

7V ~ 1.95V operating voltage

Wide operating temperature range of -40°C to 85°C

Surface mount 63-VFBGA package

Product Advantages

High storage capacity for data-intensive applications

Fast read/write speeds for efficient performance

Low power consumption for energy-efficient operation

Wide temperature range for use in diverse environments

Key Reasons to Choose This Product

Reliable and durable NAND flash technology from a trusted manufacturer

Scalable storage solution for growing data requirements

Versatile compatibility and suitability for various applications

Competitive pricing and excellent value for the performance offered

Quality and Safety Features

Rigorous quality control and testing processes

Compliance with industry safety and environmental standards

Compatibility

The TC58BYG1S3HBAI4 is a standard NAND flash memory chip that is compatible with a wide range of electronic devices and systems that require non-volatile storage.

Application Areas

Embedded systems

Industrial automation

Consumer electronics

Automotive applications

Telecommunications equipment

Data storage and backup systems

Product Lifecycle

The TC58BYG1S3HBAI4 is an active and currently available product. Toshiba Memory America continues to offer this model and similar NAND flash memory solutions. If you have any questions or need assistance in finding alternative or equivalent models, please contact our website's sales team.