TC58BYG0S3HBAI4 - Kioxia America, Inc.

Manufacturer Part Number

TC58BYG0S3HBAI4

Manufacturer

Toshiba Memory America

Introduction

The TC58BYG0S3HBAI4 is a high-performance NAND type FLASH memory from Toshiba's Benand™ series, provided in a Tray package.

Product Features and Performance

Non-Volatile FLASH memory

Utilizes NAND technology with the SLC format

Memory size of 1Gbit organized as 128M x 8

Fast write cycle time of 25ns

Operating voltage range from 1.7V to 1.95V

Surface Mount 63-VFBGA package

Product Advantages

High reliability and endurance

Excellent for intensive write operations

Suitable for wide temperature range applications from -40°C to 85°C

SLC NAND offers better performance and longevity compared to other types

Key Technical Parameters

Memory Type: Non-Volatile FLASH

Technology: FLASH NAND (SLC)

Memory Size: 1Gbit

Organization: 128M x 8

Write Cycle Time: 25ns

Voltage Supply: 1.7V ~ 1.95V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Manufactured in compliance with high industry standards

Enhanced data integrity and retention

Compatibility

Compatible with various applications requiring data storage under harsh environmental conditions

Application Areas

Industrial automation

Networking equipment

Automotive applications

Product Lifecycle

Product Status: Active

Not nearing discontinuation and replacements or upgrades are available and ongoing

Several Key Reasons to Choose This Product

Offers stable and reliable storage under extreme environmental conditions

Fast data writing capability improves system responsiveness

SLC NAND technology implies better endurance and fewer failures

Lower power consumption suitable for energy-efficient systems

Supports a wide range of industrial and automotive applications