Manufacturer Part Number
TC58BYG0S3HBAI6
Manufacturer
Toshiba Memory America
Introduction
The TC58BYG0S3HBAI6 is a high-performance NAND flash memory chip from Toshiba's Benand™ series, designed for non-volatile data storage solutions.
Product Features and Performance
Non-Volatile memory retains data without power
FLASH memory format allows for fast read/write operations
Utilizes SLC NAND technology for reliability and endurance
Offers a memory size of 1Gbit for ample storage capacity
Organized as 128M x 8 for efficient memory structure
Parallel memory interface for high-speed data transfer
Swift write cycle time and access time at 25ns
Supports a wide voltage supply range from 1.7V to 1.95V
Designed for extended operating temperatures from -40°C to 85°C
Product Advantages
High reliability and longevity due to SLC NAND technology
Quick data access suitable for performance-critical applications
Robust operation in extreme temperatures
Ideal for applications requiring sustained data integrity and low power consumption
Key Technical Parameters
Memory Type: FLASH NAND (SLC)
Memory Size: 1Gbit
Memory Organization: 128M x 8
Write Cycle Time Word, Page: 25ns
Access Time: 25 ns
Voltage Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Quality and Safety Features
Rigorous quality control and testing standards
Built-in error correction codes for enhanced data integrity
High temperature tolerance ensuring reliability across various environments
Compatibility
Parallel interface suitable for a range of embedded systems
Industry-standard VFBGA packaging for compatibility with various PCB designs
Application Areas
Industrial automation and control systems
Consumer electronics
Medical equipment
Telecommunications
Automotive electronics
Internet of Things (IoT) devices
Product Lifecycle
Active status indicates current production with ongoing manufacturer support
No indication of nearing discontinuation, suggesting stable supply and availability
Upgrades or replacements can be sourced within Toshiba's NAND flash memory portfolio
Several Key Reasons to Choose This Product
Trusted reliability and quality from a leading manufacturer, Toshiba Memory America
Enhanced durability and data retention with Single-Level Cell (SLC) NAND technology
Fast access times enable high-speed operations for critical applications
Broad operating temperature range caters to demanding industrial applications
Continuing product support and availability in its active lifecycle stage
User-friendly VFBGA packaging for ease of design and manufacturing integration