Manufacturer Part Number
TC58BVG1S3HBAI4
Manufacturer
Toshiba Memory America
Introduction
High-capacity, Single-level Cell (SLC) NAND flash memory device designed for high-performance and reliability in various storage applications.
Product Features and Performance
Non-Volatile memory type
FLASH memory format
Technologically advanced NAND (SLC) storage
Memory size of 2Gbit
Organized as 256M x 8
High-speed Write Cycle Time of 25ns
Surface Mount technology for PCB integration
63-VFBGA package for compact design
Product Advantages
Durable SLC NAND flash technology
Consistent high-speed data writing
Wide voltage supply range for versatile use
Operational in extreme temperature conditions
Benand™ Series known for quality and reliability
Key Technical Parameters
Memory Size: 2Gbit
Memory Organization: 256M x 8
Write Cycle Time: 25ns
Voltage Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Package/Case: 63-VFBGA
Supplier Device Package: 63-TFBGA (9x11)
Quality and Safety Features
Built to withstand industrial temperature ranges
Robust against multiple write cycles
Complies with industry safety and quality standards
Compatibility
Compatible with various electronic devices requiring high-reliability memory storage
Designed for surface mount compatible circuit boards
Application Areas
Embedded systems
Industrial electronics
Portable consumer devices
Automotive applications
Data storage solutions
Product Lifecycle
Active product status
Not reported as nearing discontinuation
Upgrades or replacements may be available as technology advances
Several Key Reasons to Choose This Product
Reliable data retention in SLC NAND flash
High-speed programming capability
Operating stability in diverse environmental conditions
Compatibility with modern and legacy systems
Compact form factor for space-sensitive designs
Long-term product support and availability from Toshiba Memory America
Expertise and reputation of Toshiba in memory technology