Manufacturer Part Number
TC58BVG0S3HBAI4
Manufacturer
Toshiba Memory America
Introduction
The TC58BVG0S3HBAI4 is a high-performance NAND type flash memory.
Product Features and Performance
SLC NAND technology
Fast write cycle time of 25ns
Quick access time of 25ns
Parallel memory interface
Surface mount 63-VFBGA package
Product Advantages
Reliable storage over a wide temperature range
Stable performance for non-volatile memory needs
SLC NAND for enhanced endurance and reliability
Key Technical Parameters
Memory Type: Non-Volatile FLASH
Memory Size: 1Gbit
Organization: 128M x 8
Voltage Supply: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Robust temperature range for operation in harsh environments
Durable design typical of Toshiba Memory products
Compatibility
Compatible with applications requiring a parallel interface for data storage
Application Areas
Industrial automation
Communication equipment
Medical devices
Consumer electronics
Product Lifecycle
Active status
Not reported as nearing discontinuation
Check with manufacturer for replacement or upgrades
Several Key Reasons to Choose This Product
Toshiba's reputation for reliable memory solutions
Suitable for applications that demand consistent and durable memory storage
Broad voltage supply range ensuring compatibility with various electronics
Extended operating temperature suitable for rigorous environments
The miniature package is ideal for space-constrained applications
TC5816AFTTAEC Product (Toshiba Electronic Devices and Stora