Manufacturer Part Number
TC58BVG0S3HTA00
Manufacturer
Toshiba Memory America
Introduction
High-reliability SLC NAND flash memory for industrial applications
Product Features and Performance
Single-Level Cell (SLC) NAND technology
High read/write endurance
Fast write cycle time of 25ns
Quick access time of 25ns
1Gbit memory size with 128M x 8 organization
Parallel memory interface for easy integration
Product Advantages
Durable and reliable for critical applications
SLC technology for enhanced data integrity
Optimal for high-performance and industrial uses
Key Technical Parameters
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH NAND (SLC)
Memory Size: 1Gbit
Memory Organization: 128M x 8
Write Cycle Time Word, Page: 25ns
Access Time: 25 ns
Voltage Supply: 2.7V to 3.6V
Operating Temperature: 0°C to 70°C (TA)
Quality and Safety Features
Sturdy construction for surface mount
Wide operating temperature range for harsh environments
Compatibility
Industry-standard 48-TFSOP packaging
Parallel interface for broad compatibility with existing designs
Application Areas
Embedded systems
Industrial automation
Telecommunications
Automotive applications
Internet of Things (IoT) devices
Product Lifecycle
Active status, not nearing discontinuation
Continued support and availability
Several Key Reasons to Choose This Product
Manufactured by Toshiba, a leader in memory technology
Reliable SLC NAND flash suitable for demanding industrial applications
Fast access and write times improve system performance
Stable operation in a wide range of temperatures
Industry-standard package and interface ensure easy design integration
Long-term product support for continued operation and maintenance
TC58BVG1S3ETA00TAEC Product (Toshiba Electronic Devices and Stora
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