TC58BVG1S3HBAI6 - Kioxia America, Inc.

Manufacturer Part Number

TC58BVG1S3HBAI6

Manufacturer

Toshiba Memory America

Introduction

Toshiba Benand™ series 2Gbit NAND flash memory for high-performance and reliable data storage.

Product Features and Performance

High-density SLC NAND flash memory

High-speed parallel interface

Write Cycle Time of 25ns

Access Time of 25 ns

Voltage supply range of 2.7V to 3.6V

Wide operating temperature range from -40°C to 85°C

Product Advantages

SLC technology for increased reliability and longevity

Fast read and write capabilities

Suitable for a wide range of industrial applications due to its temperature tolerance

Key Technical Parameters

Memory Type: Non-Volatile

Memory Format: FLASH

Technology: FLASH - NAND (SLC)

Memory Size: 2Gbit

Memory Organization: 256M x 8

Memory Interface: Parallel

Voltage - Supply: 2.7V ~ 3.6V

Operating Temperature: -40°C ~ 85°C (TA)

Quality and Safety Features

High reliability under extreme conditions

Meets industry standards for quality and safety

Compatibility

Compatible with various devices requiring high-speed, reliable storage.

Application Areas

Industrial automation

Consumer electronics

Medical devices

Automotive applications

Telecommunications

Product Lifecycle

Active product status, not nearing discontinuation

Alternatives and upgrades would be available from Toshiba Memory America

Several Key Reasons to Choose This Product

SLC NAND technology ensures data integrity and endurance

Uniform product longevity under harsh conditions

Tailored for high-performance applications requiring a robust memory solution

Trusted manufacturer with a track record in memory products

Competitive access and write cycle times for demanding use cases

Availability of technical support and assistance from Toshiba Memory America