Manufacturer Part Number
IXTQ14N60P
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
600V drain-to-source voltage
14A continuous drain current at 25°C case temperature
550mΩ maximum on-resistance at 7A, 10V
2500pF maximum input capacitance at 25V
300W maximum power dissipation at 25°C case temperature
Low gate charge of 36nC at 10V
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact TO-3P package for efficient heat dissipation
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 550mΩ @ 7A, 10V
Continuous Drain Current (Id): 14A @ 25°C case temperature
Input Capacitance (Ciss): 2500pF @ 25V
Power Dissipation (Pd): 300W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Through-hole TO-3P package for reliable mounting
Compatibility
Suitable for use in various power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Industrial control systems
Product Lifecycle
Current production model, not nearing discontinuation
Replacement or upgrade models may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Efficient power conversion with low on-resistance
Compact and thermally efficient TO-3P package
Wide operating temperature range for diverse environmental conditions
RoHS3 compliance for environmental responsibility
IXTP90N055TIXYSMOSFET N-CH 55V 90A TO220AB