Manufacturer Part Number
IXTQ130N10T
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET in a TO-3P package
Product Features and Performance
Trench MOSFET technology for low on-resistance and high current handling
High current rating of 130A continuous drain current at 25°C case temperature
Low on-resistance of 9.1mΩ at 25A, 10V
Wide operating temperature range of -55°C to 175°C
High drain-source voltage rating of 100V
Product Advantages
Excellent power efficiency and thermal management
Robust and reliable performance
Suitable for high-power switching and amplification applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.1mΩ @ 25A, 10V
Continuous Drain Current (Id): 130A @ 25°C case temperature
Input Capacitance (Ciss): 5080pF @ 25V
Power Dissipation (Ptot): 360W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting in a TO-3P package
Application Areas
High-power switching and amplification circuits
Motor drives
Power supplies
Inverters and converters
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current and voltage handling capabilities
Robust and reliable design for demanding applications
Suitable for a wide range of high-power electronic systems
