Manufacturer Part Number
IXTQ170N10P
Manufacturer
IXYS Corporation
Introduction
This is a high-power N-channel MOSFET transistor designed for a variety of industrial and power electronics applications.
Product Features and Performance
Operating temperature range of -55°C to 175°C (junction temperature)
Drain-to-source voltage (Vdss) of 100V
Maximum gate-to-source voltage (Vgs) of ±20V
Very low on-resistance (Rds(on)) of 9mΩ at 500mA, 10V
Continuous drain current (Id) of 170A at 25°C (case temperature)
Input capacitance (Ciss) of 6000pF at 25V
Maximum power dissipation of 715W at 25°C (case temperature)
N-channel MOSFET technology
Product Advantages
Excellent performance and efficiency in high-power applications
Wide operating temperature range
Low on-resistance for low conduction losses
High current handling capability
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 9mΩ @ 500mA, 10V
Continuous drain current (Id): 170A @ 25°C (case temperature)
Input capacitance (Ciss): 6000pF @ 25V
Power dissipation (max): 715W @ 25°C (case temperature)
Quality and Safety Features
RoHS3 compliant
TO-3P package for reliable thermal management
Compatibility
Through-hole mounting
Application Areas
Industrial power electronics
Motor control
Switch-mode power supplies
Inverters and converters
Welding equipment
Lighting control
Product Lifecycle
This product is currently in active production and not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance and efficiency in high-power applications
Wide operating temperature range for versatile use
Low on-resistance for reduced conduction losses and improved energy efficiency
High current handling capability for demanding applications
Reliable and robust TO-3P package construction
RoHS3 compliance for environmentally-friendly use
