Manufacturer Part Number
IXTQ110N10P
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET transistor suitable for a wide range of power electronics applications.
Product Features and Performance
110A continuous drain current at 25°C
100V drain-to-source voltage
15mΩ maximum on-resistance at 500mA, 10V
Wide operating temperature range of -55°C to 175°C
Low gate charge of 110nC at 10V
Fast switching speed and low gate capacitance
Product Advantages
High power handling capability
Low on-resistance for efficient power conversion
Wide temperature range for rugged operation
Optimized for fast switching applications
Suitable for various power electronics designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 15mΩ @ 500mA, 10V
Continuous Drain Current (Id): 110A @ 25°C
Input Capacitance (Ciss): 3550pF @ 25V
Power Dissipation (Pd): 480W @ 25°C
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and automotive applications
Compatibility
Through-hole TO-3P package
Suitable for a variety of power electronics designs
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and widely available.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High power handling capability for demanding applications
Low on-resistance for efficient power conversion
Wide temperature range for reliable operation in harsh environments
Fast switching speed and low gate charge for optimized performance
Proven quality and safety features for industrial and automotive use