Manufacturer Part Number
IXTQ110N055P
Manufacturer
IXYS Corporation
Introduction
This product is a high-performance N-channel MOSFET transistor in the TO-3P package. It is suitable for various power electronic applications.
Product Features and Performance
High current capability up to 110A continuous drain current
Low on-resistance of 13.5mΩ
Wide operating temperature range of -55°C to 175°C
Low gate charge of 76nC
High power dissipation of 390W
Product Advantages
Excellent thermal performance
High reliability and robustness
Suitable for high-power, high-frequency applications
Easy to drive and integrate into power circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 55V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 13.5mΩ
Input Capacitance (Ciss): 2210pF
Threshold Voltage (Vgs(th)): 5.5V
Quality and Safety Features
RoHS3 compliant
TO-3P package for efficient heat dissipation
Compatibility
This MOSFET is compatible with various power electronic circuits and systems.
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation equipment
Renewable energy systems
Automotive electronics
Product Lifecycle
The IXTQ110N055P is currently in production and available for purchase. There are no known plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range for reliability
Robust and reliable design for industrial applications
Easy integration into power electronics circuits
IXTP80N12T2IXYSMOSFET N-CH 120V 80A TO220AB