Manufacturer Part Number
IXTQ100N25P
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET transistor suitable for various power electronics applications
Product Features and Performance
Operates in temperature range of -55°C to 150°C
Drain-to-Source voltage rating of 250V
Maximum gate-to-source voltage of ±20V
Very low on-state resistance of 24mΩ @ 50A, 10V
Continuous drain current of 100A at 25°C
Input capacitance of 6300pF @ 25V
Maximum power dissipation of 600W at case temperature
Product Advantages
High power handling capability
Excellent thermal management
Low on-state resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
MOSFET technology
N-channel FET type
TO-3P package
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability power electronics applications
Compatibility
Direct replacement for similar power MOSFET devices in the market
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial and automotive power electronics
Product Lifecycle
This is an active and widely used power MOSFET device
Replacement and upgrade options are available from IXYS and other manufacturers
Key Reasons to Choose This Product
Proven high-power performance
Robust and reliable design
Efficient power conversion with low on-state resistance
Wide operating temperature range
RoHS compliance for use in modern power electronics systems