Manufacturer Part Number
IXTP76P10T
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
MOSFET (Metal Oxide) Technology
Through Hole TO-220-3 Package
Operating Temperature: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±15V
On-State Resistance (Rds(on)): 25mΩ @ 38A, 10V
Continuous Drain Current (Id): 76A @ 25°C (Tc)
Input Capacitance (Ciss): 13700pF @ 25V
Power Dissipation (Max): 298W (Tc)
Gate Charge (Qg): 197nC @ 10V
Product Advantages
Low on-state resistance
High current handling capability
Suitable for high-power applications
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±15V
On-State Resistance (Rds(on)): 25mΩ
Continuous Drain Current (Id): 76A
Input Capacitance (Ciss): 13700pF
Power Dissipation (Max): 298W
Quality and Safety Features
RoHS3 Compliant
TO-220-3 Package
Compatibility
Suitable for high-power, high-voltage applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial control systems
Product Lifecycle
Current product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High current handling capability
Low on-state resistance
Wide operating temperature range
Suitable for high-power, high-voltage applications
RoHS3 compliant
IXTQ100N25PIXYSMOSFET N-CH 250V 100A TO3P