Manufacturer Part Number
IXTP60N20T
Manufacturer
IXYS Corporation
Introduction
High power N-channel MOSFET with trench technology
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
High drain-source voltage rating of 200V
Low on-resistance (RDS(on)) of 40mΩ at 30A, 10V
High continuous drain current of 60A at 25°C
Fast switching with low gate charge of 73nC at 10V
Product Advantages
Excellent thermal performance and power handling capability
Suitable for high-power, high-efficiency applications
Reliable trench MOSFET technology
Key Technical Parameters
Drain-Source Voltage (VDS): 200V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 40mΩ @ 30A, 10V
Continuous Drain Current (ID): 60A @ 25°C
Input Capacitance (Ciss): 4530pF @ 25V
Power Dissipation (PD): 500W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable mounting and thermal management
Compatibility
Through-hole mounting for easy integration into various circuits
Application Areas
High-power switching applications
Motor drives
Power supplies
Inverters and converters
Product Lifecycle
Currently available from the manufacturer
No known plans for discontinuation
Replacement parts and upgrades may be available
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Reliable trench MOSFET technology for long service life
Wide operating temperature range for versatile applications
Low on-resistance for high efficiency
Fast switching capability for high-speed circuits
IXTP80N12T2IXYSMOSFET N-CH 120V 80A TO220AB