Manufacturer Part Number
IXTP50N25T
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with trench technology
Product Features and Performance
250V drain-to-source voltage
50A continuous drain current
50mΩ maximum on-resistance
400W maximum power dissipation
Capable of operating in the -55°C to 150°C temperature range
Product Advantages
Excellent on-state and switching performance
High power density
Robust design for reliable operation
Key Technical Parameters
Vdss: 250V
Vgs(max): ±30V
Rds(on) max: 50mΩ @ 25A, 10V
Id(max): 50A @ 25°C
Ciss(max): 4000pF @ 25V
Qg(max): 78nC @ 10V
Quality and Safety Features
ROHS3 compliant
Through-hole mounting in TO-220-3 package
Compatibility
Suitable for use in a variety of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power converters
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent power handling capabilities
High efficiency and low on-resistance
Reliable and robust design for harsh environments
Wide operating temperature range
Easy to integrate into power electronics systems
IXTP60N10T MOSIXYS / Littelfuse