Manufacturer Part Number
IXTP450P2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
500V Drain-Source Voltage (Vdss)
16A Continuous Drain Current (Id) at 25°C
330mΩ On-Resistance (Rds(on)) at 8A, 10V
2530pF Input Capacitance (Ciss) at 25V
300W Power Dissipation (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
High Voltage Capability
Low On-Resistance
High Power Handling
Key Technical Parameters
Vdss: 500V
Vgs (Max): ±30V
Rds(on) (Max): 330mΩ @ 8A, 10V
Ciss (Max): 2530pF @ 25V
Power Dissipation (Max): 300W (Tc)
Quality and Safety Features
ROHS3 Compliant
TO-220-3 Package
Compatibility
Compatible with various electronic circuit designs requiring high voltage, high power MOSFET devices
Application Areas
Power Supplies
Motor Drives
Inverters
Switching Regulators
Product Lifecycle
This product is an active and available discrete semiconductor component from IXYS Corporation.
Several Key Reasons to Choose This Product
High voltage capability up to 500V
Low on-resistance for efficient power handling
High power dissipation rating of 300W
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant for environmentally-friendly applications
