Manufacturer Part Number
IXTP3N100P
Manufacturer
IXYS Corporation
Introduction
The IXTP3N100P is a high-voltage, N-channel power MOSFET that is suitable for a wide range of power electronics applications.
Product Features and Performance
High voltage rating of 1000V
Low on-resistance of 4.8Ω
Continuous drain current of 3A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1100pF
Maximum power dissipation of 125W
Product Advantages
Excellent for high-voltage, high-power applications
Efficient power handling due to low on-resistance
Reliable performance over a wide temperature range
Compact and easy to integrate design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.8Ω
Continuous Drain Current (Id): 3A
Input Capacitance (Ciss): 1100pF
Power Dissipation (Ptot): 125W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for secure installation
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and power conversion systems.
Application Areas
High-voltage power electronics
Industrial control systems
Renewable energy systems
Automotive electronics
Product Lifecycle
The IXTP3N100P is an active product and is currently available.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High voltage and power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable performance
Compact and easy to integrate design
RoHS3 compliance for environmental responsibility