Manufacturer Part Number
IXTP3N120
Manufacturer
IXYS Corporation
Introduction
The IXTP3N120 is a high-performance, N-channel MOSFET transistor in a TO-220-3 package, part of the HiPerFET series.
Product Features and Performance
1200V drain-to-source voltage (Vdss)
5 ohm maximum on-resistance (Rds(on)) at 500mA, 10V
3A continuous drain current (Id) at 25°C
1350 pF maximum input capacitance (Ciss) at 25V
200W maximum power dissipation at case temperature (Tc)
Operating temperature range: -55°C to 150°C
Product Advantages
Robust design with high voltage and current handling capabilities
Low on-resistance for efficient power switching
Compact TO-220-3 package for easy integration
Key Technical Parameters
N-channel MOSFET technology
Vgs(th) max of 5V at 250A
Gate charge (Qg) max of 42 nC at 10V
Drive voltage range: 10V maximum
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switched-mode power supplies
Motor drives
Industrial automation and control
Renewable energy systems
Product Lifecycle
Currently in active production
Replacement or upgrade options available as needed
Key Reasons to Choose This Product
Excellent performance and efficiency for high voltage power switching
Robust and reliable design for demanding applications
Easy integration with the compact TO-220-3 package
Wide operating temperature range for versatile use
Manufactured to high quality standards for long-term reliability
