Manufacturer Part Number
IXTP26P20P
Manufacturer
IXYS Corporation
Introduction
High-performance P-channel power MOSFET transistor
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-Source voltage (Vdss): 200V
Maximum Gate-to-Source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 170mΩ @ 13A, 10V
Continuous Drain Current (Id) @ 25°C: 26A
Input Capacitance (Ciss): 2740pF @ 25V
Power Dissipation (Tc): 300W
Product Advantages
Robust and reliable performance
Efficient power handling
Suitable for high-voltage, high-current applications
Key Technical Parameters
MOSFET technology
P-channel FET type
Threshold Voltage (Vgs(th)): 4V @ 250A
Gate Charge (Qg): 56nC @ 10V
Quality and Safety Features
RoHS3 compliant
TO-220-3 package
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation
Appliances
Product Lifecycle
Current product, no discontinuation or replacement planned
Several Key Reasons to Choose This Product
Excellent power handling capability
High voltage and current ratings
Low on-state resistance for efficient performance
Wide operating temperature range
Robust and reliable construction
IXTP220N04TIXYS / Littelfuse