Manufacturer Part Number
IXTP220N04T2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
Optimized trench-gate MOSFET technology for low on-resistance and fast switching
Capable of handling up to 220A continuous drain current at 25°C
Low on-resistance of 3.5mΩ @ 50A, 10V
Wide operating temperature range of -55°C to 175°C
High drain-source voltage rating of 40V
Low gate-source voltage range of ±20V
Product Advantages
Excellent power handling and efficiency
Robust design for demanding applications
Reliable performance across wide temperature range
Easy to integrate into power electronics circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.5mΩ @ 50A, 10V
Continuous Drain Current (Id): 220A @ 25°C
Input Capacitance (Ciss): 6820pF @ 25V
Power Dissipation (Pd): 360W @ Tc
Quality and Safety Features
Trench-gate MOSFET technology for high reliability
RoHS3 compliant for environmental safety
TO-220-3 package for secure mounting and heat dissipation
Compatibility
Suitable for a wide range of power electronics applications
Can be used in motor drives, power supplies, and inverters
Application Areas
Industrial motor drives
Power supplies and converters
Renewable energy systems
Electric vehicles and hybrid systems
Product Lifecycle
Currently in production with no plans for discontinuation
Replacement and upgrade options available from IXYS
Key Reasons to Choose This Product
Excellent power handling and efficiency for demanding applications
Robust and reliable performance across wide temperature range
Easy integration into power electronics circuits due to standard package
Cost-effective solution for high-current, high-voltage applications
Backed by the technical expertise and quality assurance of IXYS
IXTP200N055TIXYS / Littelfuse