Manufacturer Part Number
IXTP260N055T2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
55V Drain-Source Voltage
260A Continuous Drain Current at 25°C
480W Power Dissipation
3mΩ On-Resistance at 50A, 10V
10800pF Input Capacitance at 25V
140nC Gate Charge at 10V
-55°C to 175°C Operating Temperature Range
Product Advantages
High power and current handling capability
Low on-resistance for efficient power conversion
Suitable for a wide range of operating temperatures
Reliable MOSFET technology
Key Technical Parameters
Drain-Source Voltage (Vdss): 55V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 260A at 25°C
On-Resistance (Rds(on)): 3.3mΩ at 50A, 10V
Input Capacitance (Ciss): 10800pF at 25V
Power Dissipation (Pd): 480W at Tc
Quality and Safety Features
ROHS3 Compliant
TO-220-3 Package
Compatibility
Suitable for a variety of power electronics applications
Application Areas
Power conversion and control
Motor drives
Inverters and converters
Switching power supplies
Product Lifecycle
Active product
No discontinuation or replacement information available
Key Reasons to Choose This Product
High power and current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Reliable MOSFET technology
Compact and industry-standard TO-220-3 package
IXTP220N04T2 MOSIXYS / Littelfuse