Manufacturer Part Number
IXTP24N65X2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET for high-voltage, high-current applications
Product Features and Performance
Ultra-low on-state resistance (Rds(on))
High drain-to-source voltage rating (650V)
High continuous drain current rating (24A at 25°C)
Low input capacitance (2060pF)
High power dissipation capability (390W at Tc)
Fast switching speed
Rugged and reliable design
Product Advantages
Excellent for high-voltage, high-current switching applications
Efficient power conversion with low conduction losses
Capable of handling high-power loads
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 145mΩ @ 12A, 10V
Continuous Drain Current (Id): 24A @ 25°C
Input Capacitance (Ciss): 2060pF @ 25V
Power Dissipation (Tc): 390W
Quality and Safety Features
RoHS3 compliant
Tested and qualified for reliable operation
Compatibility
TO-220-3 package, suitable for various high-power electronic designs
Application Areas
High-voltage, high-current switching applications
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent performance and efficiency in high-power applications
Robust design for reliable operation
Wide range of technical parameters to meet diverse requirements
Compatibility with common circuit designs and packaging
IXTP200N055TIXYS / Littelfuse