Manufacturer Part Number
IXTP1R6N100D2
Manufacturer
IXYS Corporation
Introduction
This product is a discrete N-channel MOSFET transistor with a depletion mode feature.
Product Features and Performance
Wide drain-to-source voltage range of up to 1000V
Low on-resistance (RDS(on)) of 10Ω at 800mA, 0V
Continuous drain current of 1.6A at 25°C
Wide operating temperature range of -55°C to 150°C
Input capacitance of 645pF at 25V
Gate charge of 27nC at 5V
Product Advantages
High voltage capability
Low on-resistance for low power loss
Compact TO-220-3 package
Suitable for a variety of power switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 1000V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 10Ω @ 800mA, 0V
Continuous Drain Current (ID): 1.6A @ 25°C
Input Capacitance (Ciss): 645pF @ 25V
Gate Charge (Qg): 27nC @ 5V
Quality and Safety Features
RoHS3 compliant
Reliable through-hole mounting
Compatibility
This MOSFET is compatible with various power switching applications.
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
General power switching applications
Product Lifecycle
This product is currently in production and available. There are no plans for discontinuation or upgrades at this time.
Key Reasons to Choose This Product
High voltage capability up to 1000V
Low on-resistance for efficient power conversion
Compact and reliable TO-220-3 package
Wide operating temperature range
Suitable for a variety of power switching applications
IXTP220N04T2 MOSIXYS / Littelfuse