Manufacturer Part Number
IXTP52P10P
Manufacturer
IXYS Corporation
Introduction
High-performance P-channel power MOSFET
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High drain-source voltage: 100V
Low on-resistance: 50mΩ @ 52A, 10V
High continuous drain current: 52A @ 25°C
Low input capacitance: 2845pF @ 25V
High power dissipation: 300W @ Tc
Product Advantages
Excellent thermal performance
Robust and reliable
Suitable for high-power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 50mΩ @ 52A, 10V
Drain Current (Id): 52A @ 25°C
Input Capacitance (Ciss): 2845pF @ 25V
Power Dissipation (Pd): 300W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable operation
Compatibility
Through-hole mounting
Application Areas
High-power switching circuits
Motor drives
Power supplies
Inverters
Converters
Product Lifecycle
Currently available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance and high power handling capability
Low on-resistance for efficient power conversion
Robust and reliable construction
Suitable for a wide range of high-power switching applications
IXTP75N10P MOSIXYS / Littelfuse