Manufacturer Part Number
IXSX50N60AU1
Manufacturer
IXYS Corporation
Introduction
IGBT Transistor
Product Features and Performance
Operates at high voltage up to 600V
Handles high current up to 75A
Fast switching with low reverse recovery time of 50ns
Low on-state voltage drop of 2.7V at 50A
High power capability up to 300W
Wide operating temperature range from -55°C to 150°C
Product Advantages
Robust and reliable performance
Efficient power conversion
Suitable for high-power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 75A
Collector Current Pulsed (Max): 200A
On-state Voltage Drop: 2.7V @ 15V, 50A
Reverse Recovery Time: 50ns
Gate Charge: 190nC
Switching Energy (Turn-off): 6mJ
Quality and Safety Features
Designed for high-reliability operation
Overcurrent and overvoltage protection
Compatibility
Compatible with various high-power applications
Application Areas
Industrial motor drives
Power supplies
Inverters
UPS systems
Welding equipment
Induction heating
Electric vehicles
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent high-voltage and high-current handling capability
Fast switching performance for efficient power conversion
Robust design for reliable operation in demanding applications
Wide temperature range for versatile use
Proven track record of IXYS Corporation's quality and reliability