IXSN80N60BD1 - IXYS

Manufacturer Part Number

IXSN80N60BD1

Manufacturer

IXYS Corporation

Introduction

This product is an IGBT (Insulated Gate Bipolar Transistor) module from IXYS Corporation, a leading manufacturer of power semiconductor devices.

Product Features and Performance

Operates in the temperature range of -55°C to 150°C (TJ)

Capable of handling a maximum power of 420 W

Standard input configuration

Single configuration

Input capacitance (Cies) of 6.6 nF at 25 V

Maximum collector-emitter breakdown voltage of 600 V

No NTC thermistor

Maximum collector current (Ic) of 160 A

Maximum collector-emitter saturation voltage (Vce(on)) of 2.5 V at 15 V, 80 A

Maximum collector cutoff current of 200 A

Chassis mount package (SOT-227B)

Product Advantages

Robust thermal performance with wide operating temperature range

High power handling capability

Suitable for various industrial and power electronics applications

Compact and efficient package design

Key Technical Parameters

Manufacturer Part Number: IXSN80N60BD1

Packaging: SOT-227B

Voltage Collector Emitter Breakdown (Max): 600 V

Current Collector (Ic) (Max): 160 A

Vce(on) (Max) @ Vge, Ic: 2.5 V @ 15 V, 80 A

Quality and Safety Features

Meets industry standards for quality and reliability

Undergoes rigorous testing and quality control measures

Compatibility

Suitable for a wide range of industrial and power electronics applications

Application Areas

Power conversion and control systems

Motor drives

Renewable energy systems

Industrial automation and control

Product Lifecycle

This product is an active and widely available IGBT module from IXYS Corporation.

Replacements and upgrades may be available as technology advances.

Key Reasons to Choose This Product

Reliable and robust performance with a wide operating temperature range

High power handling capability for demanding applications

Compact and efficient package design

Compatibility with a variety of industrial and power electronics applications

Supported by a reputable manufacturer with a strong track record in power semiconductor technology