Manufacturer Part Number
IXSR35N120BD1
Manufacturer
IXYS Corporation
Introduction
This is a high-performance single IGBT (Insulated Gate Bipolar Transistor) from IXYS Corporation.
Product Features and Performance
Optimized for fast switching applications
Designed to handle high power levels up to 250W
IGBT type: PT (Punch-Through)
Collector-Emitter Breakdown Voltage (VCE(BR)): 1200V
Collector Current (IC): 70A continuous, 140A pulsed
Low Collector-Emitter Saturation Voltage (VCE(on)): 3.6V @ 15V, 35A
Fast Reverse Recovery Time (trr): 40ns
Product Advantages
Excellent switching performance for high-frequency, high-power applications
High current handling capability
Low conduction losses
Fast switching speed
Key Technical Parameters
Package: TO-247-3 (ISOPLUS247)
Operating Temperature Range: -55°C to 150°C (TJ)
Gate Charge: 120nC
Switching Energy (Eoff): 5mJ
Turn-on/off Delay Times (Td(on/off)): 36ns/160ns
Quality and Safety Features
Robust design for reliable performance
Complies with relevant safety standards
Compatibility
This IGBT is compatible with a wide range of high-power, high-frequency applications.
Application Areas
Inverters
Converters
Motor drives
Power supplies
Welding equipment
Industrial automation
Product Lifecycle
This IGBT is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
High power handling capability
Excellent switching performance for efficient, high-frequency operation
Reliable and robust design
Extensive application support from IXYS Corporation
IXSN55N120AIXYSIGBT MOD 1200V 110A 500W SOT227B