Manufacturer Part Number
IXSN55N120AU1
Manufacturer
IXYS Corporation
Introduction
This is an IGBT (Insulated Gate Bipolar Transistor) module from IXYS Corporation, a leading manufacturer of power semiconductors.
Product Features and Performance
Rated for 500W of maximum power
Operates in the temperature range of -55°C to 150°C
Input capacitance of 8nF at 25V
Collector-emitter breakdown voltage of 1200V
Maximum collector current of 110A
On-state voltage drop (Vce(on)) of 4V at 15V gate voltage and 55A collector current
Product Advantages
Robust and reliable performance
High power density
Wide operating temperature range
Suitable for various power electronics applications
Key Technical Parameters
Collector-emitter voltage: 1200V
Collector current: 110A
On-state voltage drop: 4V
Input capacitance: 8nF
Quality and Safety Features
SOT-227B package for chassis mount
No NTC thermistor included
Compatibility
This IGBT module is designed for use in various power electronics applications, such as motor drives, inverters, and power converters.
Application Areas
Motor drives
Inverters
Power converters
Industrial control systems
Product Lifecycle
The IXSN55N120AU1 is an active product, and IXYS Corporation continues to manufacture and support it. Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Robust and reliable performance
Suitable for a variety of power electronics applications
Backed by IXYS Corporation's expertise in power semiconductor technology
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