Manufacturer Part Number
IXSN50N60BD2
Manufacturer
IXYS Corporation
Introduction
High-power insulated-gate bipolar transistor (IGBT) module
Product Features and Performance
Designed for high-power switching applications
Fast switching speed
High power density
Low on-state voltage
High short-circuit withstand capability
Product Advantages
Efficient power conversion
Reliable and robust performance
Reduced system size and weight
Key Technical Parameters
Operating temperature range: -40°C to 150°C
Maximum power rating: 250 W
Collector-emitter breakdown voltage: 600 V
Collector current (max): 75 A
On-state voltage (max): 2.5 V @ 15 V, 50 A
Quality and Safety Features
Meets stringent quality and safety standards
Robust package design for industrial applications
Compatibility
Compatible with a wide range of power electronic systems
Application Areas
High-power switching applications
Industrial motor drives
Power supplies
Inverters and converters
Product Lifecycle
This product is currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power density and efficiency for compact system design
Reliable and robust performance for industrial applications
Excellent switching characteristics for efficient power conversion
Compatibility with a wide range of power electronic systems
IXSN35N100USTMicroelectronicsIGBT Module