Manufacturer Part Number
IXSX40N60CD1
Manufacturer
IXYS Corporation
Introduction
High-power discrete semiconductor product
Single IGBT transistor
Product Features and Performance
High power handling capability up to 280W
High voltage rating up to 600V
High current rating up to 75A continuous, 150A pulsed
Low on-state voltage drop of 2.5V @ 15V, 40A
Fast switching with 35ns reverse recovery time
190nC gate charge for efficient switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Robust and reliable performance
Efficient power conversion
Suitable for high-power applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 75A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Reverse Recovery Time (trr): 35ns
Gate Charge: 190nC
Current Collector Pulsed (Icm): 150A
Td (on/off) @ 25°C: 50ns/70ns
Quality and Safety Features
Industrial-grade quality and reliability
Safe operating area (SOA) design
Compatibility
Compatible with various high-power applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Current production model
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Robust and reliable high-power performance
Efficient power conversion with low on-state voltage drop
Fast switching capabilities for high-frequency applications
Wide operating temperature range for versatile use
Suitable for a variety of high-power industrial applications