IXSX35N120BD1 - IXYS

Manufacturer Part Number

IXSX35N120BD1

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Product

Single Transistor IGBT

Product Features and Performance

IGBT Type: PT

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 70 A

Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A

Reverse Recovery Time (trr): 40 ns

Gate Charge: 120 nC

Current Collector Pulsed (Icm): 140 A

Switching Energy: 5mJ (off)

Td (on/off) @ 25°C: 36ns/160ns

Product Advantages

High voltage and current handling capability

Fast switching performance

Low conduction and switching losses

Key Technical Parameters

Power Max: 300 W

Operating Temperature: -55°C ~ 150°C (TJ)

Manufacturer's packaging: PLUS247-3

Package / Case: TO-247-3 Variant

Input Type: Standard

Mounting Type: Through Hole

Quality and Safety Features

Robust package design for reliable operation

Designed and manufactured to meet industry safety standards

Compatibility

Compatible with a wide range of IGBT-based power electronics applications

Application Areas

Power conversion and control in industrial, automotive, and renewable energy systems

Product Lifecycle

This product is currently in production and actively supported by the manufacturer.

Replacement or upgrade options may be available from the manufacturer as technology advances.

Key Reasons to Choose This Product

High performance and reliability for demanding power applications

Optimized for efficient and compact power electronics designs

Extensive technical support and product lifecycle from a reputable manufacturer