Manufacturer Part Number
IXFP34N65X2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with ultra-low on-resistance and fast switching characteristics.
Product Features and Performance
Ultra-low on-resistance of 105 mOhm at 17A, 10V
High drain-source voltage rating of 650V
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 56 nC at 10V
High current rating of 34A continuous at 25°C
Product Advantages
Excellent efficiency and low power losses
Reliable high-voltage operation
Wide temperature range for diverse applications
Optimized for fast, high-frequency switching
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 105 mOhm @ 17A, 10V
Continuous Drain Current (Id): 34A at 25°C
Input Capacitance (Ciss): 3330 pF @ 25V
Power Dissipation (Pd): 540W at 25°C
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable thermal management
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and low power losses
Reliable high-voltage operation
Wide temperature range for diverse applications
Optimized for fast, high-frequency switching
Robust and compact TO-220-3 package
IXFP22N65X2MIXYSMOSFET N-CH 650V 22A TO220