IXFP3N120 - IXYS

Manufacturer Part Number

IXFP3N120

Manufacturer

IXYS Corporation

Introduction

High voltage, high power MOSFET transistor

Product Features and Performance

N-channel MOSFET design

1200V drain-source voltage rating

3A continuous drain current at 25°C

Low on-resistance of 4.5Ω at 500mA, 10V

High input capacitance of 1050pF at 25V

Max power dissipation of 200W at 25°C

Product Advantages

Suitable for high voltage, high power applications

Excellent efficiency and low power loss

Reliable performance across wide temperature range

Key Technical Parameters

Drain-Source Voltage (Vdss): 1200V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 4.5Ω @ 500mA, 10V

Continuous Drain Current (Id): 3A @ 25°C

Input Capacitance (Ciss): 1050pF @ 25V

Power Dissipation (Pd): 200W @ 25°C

Quality and Safety Features

RoHS3 compliant

Wide operating temperature range: -55°C to 150°C

Compatibility

Through-hole TO-220-3 package

Application Areas

High voltage, high power switching applications

Industrial motor drives

Power supplies

Inverters and converters

Product Lifecycle

Currently in production

Replacement/upgrade parts available

Key Reasons to Choose This Product

Excellent high voltage and high current capabilities

Low on-resistance for efficient power conversion

Reliable performance over wide temperature range

RoHS3 compliance for use in modern electronics

Widely compatible TO-220-3 package