Manufacturer Part Number
IXFP3N120
Manufacturer
IXYS Corporation
Introduction
High voltage, high power MOSFET transistor
Product Features and Performance
N-channel MOSFET design
1200V drain-source voltage rating
3A continuous drain current at 25°C
Low on-resistance of 4.5Ω at 500mA, 10V
High input capacitance of 1050pF at 25V
Max power dissipation of 200W at 25°C
Product Advantages
Suitable for high voltage, high power applications
Excellent efficiency and low power loss
Reliable performance across wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.5Ω @ 500mA, 10V
Continuous Drain Current (Id): 3A @ 25°C
Input Capacitance (Ciss): 1050pF @ 25V
Power Dissipation (Pd): 200W @ 25°C
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range: -55°C to 150°C
Compatibility
Through-hole TO-220-3 package
Application Areas
High voltage, high power switching applications
Industrial motor drives
Power supplies
Inverters and converters
Product Lifecycle
Currently in production
Replacement/upgrade parts available
Key Reasons to Choose This Product
Excellent high voltage and high current capabilities
Low on-resistance for efficient power conversion
Reliable performance over wide temperature range
RoHS3 compliance for use in modern electronics
Widely compatible TO-220-3 package
