IXFP7N100P - IXYS

Manufacturer Part Number

IXFP7N100P

Manufacturer

IXYS Corporation

Introduction

High-performance N-Channel MOSFET transistor with high voltage and power handling capabilities.

Product Features and Performance

N-Channel MOSFET structure

Drain-to-Source voltage up to 1000V

On-state resistance as low as 1.9 ohms

Continuous drain current up to 7A at 25°C

Wide operating temperature range of -55°C to 150°C

Low gate charge of 47nC at 10V

Fast switching speed and low gate capacitance

Product Advantages

Excellent high voltage and high power handling

Low on-state resistance for efficient power conversion

Wide safe operating area

Robust and reliable performance

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1000V

Gate-to-Source Voltage (Vgs): ±30V

On-state Resistance (Rds(on)): 1.9 ohms @ 3.5A, 10V

Continuous Drain Current (Id): 7A at 25°C

Input Capacitance (Ciss): 2590pF @ 25V

Power Dissipation: 300W at Tc

Quality and Safety Features

RoHS3 compliant

TO-220-3 package for high reliability and thermal management

Compatibility

Suitable for a wide range of power electronics applications, including power supplies, motor drives, and inverters.

Application Areas

High voltage power conversion

Industrial motor drives

Welding equipment

Uninterruptible power supplies (UPS)

Renewable energy systems

Product Lifecycle

This product is an active and widely used part. Replacement or upgrade options are available.

Key Reasons to Choose This Product

Excellent high voltage and high power handling capability

Low on-state resistance for efficient power conversion

Wide safe operating area for reliable performance

Robust and reliable design in a standard TO-220-3 package

Suitable for a wide range of power electronics applications