IXFP6N120P - IXYS

Manufacturer Part Number

IXFP6N120P

Manufacturer

IXYS Corporation

Introduction

The IXFP6N120P is a discrete semiconductor product, specifically a transistor with a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) configuration and an N-channel design.

Product Features and Performance

Voltage Rating: 1200V Drain-to-Source Voltage (Vdss)

Continuous Drain Current: 6A @ 25°C (Tc)

On-State Resistance (RDS(on)): 2.4Ω @ 500mA, 10V

Input Capacitance (Ciss): 2830pF @ 25V

Power Dissipation: 250W @ 25°C (Tc)

Operating Temperature Range: -55°C to 150°C (TJ)

Product Advantages

High voltage rating of 1200V

Low on-state resistance (RDS(on))

Compact TO-220-3 package

Suitable for high-power and high-voltage applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1200V

Gate-to-Source Voltage (Vgs): ±30V

Threshold Voltage (Vgs(th)): 5V @ 1mA

Gate Charge (Qg): 92nC @ 10V

Quality and Safety Features

RoHS3 compliant

Housed in a reliable TO-220-3 package

Compatibility

Suitable for a wide range of high-power, high-voltage applications

Application Areas

Switched-mode power supplies

Motor drives

Inverters

Solar power systems

Industrial controls

Product Lifecycle

This product is an active and currently available device from IXYS Corporation.

Replacement or upgrade options may be available from IXYS or other manufacturers.

Key Reasons to Choose This Product

High voltage rating of 1200V, suitable for demanding applications

Low on-state resistance (RDS(on)) for improved efficiency

Compact TO-220-3 package for space-constrained designs

Reliable and RoHS3 compliant for quality and safety