Manufacturer Part Number
IXFP20N85X
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Part of the HiPerFET and Ultra X series
Product Features and Performance
Drain to Source Voltage (Vdss): 850 V
Maximum Gate-Source Voltage (Vgs): ±30 V
On-State Resistance (Rds(on)): 330 mΩ @ 500 mA, 10 V
Continuous Drain Current (Id): 20 A @ 25°C (Tc)
Input Capacitance (Ciss): 1660 pF @ 25 V
Power Dissipation (Tc): 540 W
Operating Temperature Range: -55°C to 150°C
Product Advantages
High breakdown voltage for improved efficiency and reliability
Low on-state resistance for reduced power losses
Suitable for high-voltage, high-current applications
Key Technical Parameters
N-Channel MOSFET
Through-hole (TO-220-3) package
10 V drive voltage for minimum on-state resistance
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with various high-voltage, high-current applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Currently available product
No indication of discontinuation
Replacements or upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Excellent performance in high-voltage, high-current applications
Low on-state resistance for improved efficiency
Reliable and safe operation with RoHS3 compliance
Suitable for a wide range of industrial and automotive applications
IXFP22N65X2MIXYSMOSFET N-CH 650V 22A TO220