Manufacturer Part Number
IXFP180N10T2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET with TrenchT2 technology for high power density applications.
Product Features and Performance
Extremely low on-state resistance for high efficiency
High current handling capability up to 180A
Designed for high frequency and high power switching applications
Wide operating temperature range of -55°C to 175°C
Low gate charge for fast switching
Product Advantages
Excellent thermal performance
Rugged and reliable design
High power density
Efficient power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 6mΩ @ 50A, 10V
Continuous Drain Current (Id): 180A @ 25°C
Input Capacitance (Ciss): 10500pF @ 25V
Power Dissipation (Ptot): 480W @ Tc
Quality and Safety Features
RoHS3 compliant
Meets industrial safety and reliability standards
Compatibility
Compatible with various high-power switching applications
Application Areas
High-frequency, high-power switching
Motor drives
Power supplies
Inverters
Converters
Product Lifecycle
Current product offering
Replacement and upgrade options available
Key Reasons to Choose This Product
Exceptional performance and efficiency
High power density and current handling
Wide operating temperature range
Reliable and rugged design
Proven TrenchT2 technology
Compatibility with various high-power applications