Manufacturer Part Number
HUF75639S3ST
Manufacturer
Fairchild (onsemi)
Introduction
This is a discrete semiconductor product, specifically a single transistor - FET, MOSFET.
Product Features and Performance
N-Channel MOSFET transistor
100V Drain to Source Voltage
±20V Gate to Source Voltage
25mOhm On-Resistance at 56A, 10V
56A Continuous Drain Current at 25°C
2000pF Input Capacitance at 25V
200W Power Dissipation at Tc
4V Threshold Voltage at 250A
10V Drive Voltage (Max Rds On, Min Rds On)
130nC Gate Charge at 20V
Product Advantages
High power handling and low on-resistance for efficient power conversion
Wide operating temperature range of -55°C to 175°C
Surface mount package for compact design
Key Technical Parameters
MOSFET technology
N-Channel type
D2PAK (TO-263) package
100V Drain to Source Voltage
±20V Gate to Source Voltage
56A Continuous Drain Current
200W Power Dissipation
Quality and Safety Features
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power electronic circuits and applications
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
Current production model, no discontinuation planned
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling and efficiency
Wide operating temperature range
Compact surface mount package
Proven quality and reliability from Fairchild (onsemi)