Manufacturer Part Number
HUF75639G3
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor MOSFET
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 25mΩ @ 56A, 10V
Continuous Drain Current (Id): 56A @ 25°C
Input Capacitance (Ciss): 2000pF @ 25V
Power Dissipation (Tc): 200W
Gate Charge (Qg): 130nC @ 20V
Product Advantages
Low on-state resistance for low power loss
High current handling capability
Wide operating temperature range (-55°C to 175°C)
Suitable for high-frequency, high-power switching applications
Key Technical Parameters
MOSFET Technology: Metal Oxide
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 4V @ 250A
Drive Voltage (Rds(on) Max, Min Rds(on)): 10V
Quality and Safety Features
RoHS3 Compliant
TO-247-3 Package
Compatibility
Compatible with various high-power, high-frequency switching applications
Application Areas
Industrial power supplies
Motor drives
Inverters
Switch-mode power supplies
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance in high-power, high-frequency switching applications
Robust and reliable design
Wide operating temperature range
Low on-state resistance for efficient power conversion
Suitable for various industrial and power electronics applications