HUF75639P3 - onsemi

Manufacturer Part Number

HUF75639P3

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device, specifically a single N-channel MOSFET transistor.

Product Features and Performance

100V drain-to-source voltage rating

56A continuous drain current at 25°C

25mΩ maximum on-resistance at 56A, 10V

2000pF maximum input capacitance at 25V

200W maximum power dissipation at 25°C

Wide operating temperature range of -55°C to 175°C

Product Advantages

High power handling capability

Low on-resistance for efficient power switching

Suitable for a variety of power electronics applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 25mΩ @ 56A, 10V

Drain Current (Id): 56A @ 25°C

Input Capacitance (Ciss): 2000pF @ 25V

Power Dissipation (Ptot): 200W @ 25°C

Quality and Safety Features

RoHS3 compliant

TO-220-3 package for through-hole mounting

Compatibility

This MOSFET is suitable for a wide range of power electronics applications, including power supplies, motor drives, and switching circuits.

Application Areas

Power supplies

Motor drives

Switching circuits

Power conversion

Industrial electronics

Product Lifecycle

The HUF75639P3 is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High power handling capability and low on-resistance for efficient power switching

Wide operating temperature range suitable for various environmental conditions

RoHS3 compliance for environmental responsibility

Through-hole mounting option for ease of integration into existing designs

Proven reliability and performance from a trusted manufacturer, onsemi