Manufacturer Part Number
HUF75639S3ST
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET transistor for power management and control applications.
Product Features and Performance
100V drain-source voltage rating
25mΩ maximum on-resistance at 56A, 10V gate drive
56A continuous drain current at 25°C
200W power dissipation at 25°C case temperature
Extremely low gate charge for high-speed switching
Product Advantages
Ultra-low on-resistance for efficient power conversion
High current handling capability
High-speed switching for improved system efficiency
Compact DPAK (TO-263) surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 25mΩ @ 56A, 10V
Drain Current (Id): 56A @ 25°C
Power Dissipation (Pd): 200W @ 25°C case temperature
Input Capacitance (Ciss): 2000pF @ 25V
Gate Charge (Qg): 130nC @ 20V
Quality and Safety Features
RoHS3 compliant
Qualified to automotive standards
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power conversion and control in industrial, automotive, and consumer electronics applications
Ideal for high-efficiency DC-DC converters, motor drives, and other power management systems
Product Lifecycle
Current production
Replacement and upgrade options available
Key Reasons to Choose This Product
Ultra-low on-resistance for high efficiency
High current and power handling capability
Compact DPAK (TO-263) surface-mount package
Fast switching performance for improved system efficiency
Automotive-grade quality and reliability
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