HUF75645S3S - Fairchild Semiconductor

Manufacturer Part Number

HUF75645S3S

Manufacturer

Fairchild (onsemi)

Introduction

High-performance N-channel power MOSFET with UltraFET technology for high-power, high-efficiency applications.

Product Features and Performance

100V drain-to-source voltage

75A continuous drain current at 25°C

14mΩ maximum on-resistance at 75A, 10V

3790pF maximum input capacitance at 25V

310W maximum power dissipation at Tc

Wide operating temperature range of -55°C to 175°C

Product Advantages

UltraFET technology for high efficiency

Low on-resistance for reduced conduction losses

High power handling capability

Compact D2PAK (TO-263) surface mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 14mΩ @ 75A, 10V

Continuous Drain Current (Id): 75A @ 25°C

Power Dissipation (Pd): 310W @ Tc

Input Capacitance (Ciss): 3790pF @ 25V

Quality and Safety Features

RoHS3 compliant

Suitable for high-power, high-efficiency applications

Compatibility

Surface mount D2PAK (TO-263) package

Application Areas

High-power motor drives

Power supplies

Industrial and consumer electronics

Automotive applications

Product Lifecycle

Current production, no discontinuation plans

Replacements and upgrades available as technology advances

Key Reasons to Choose

High efficiency and low losses with UltraFET technology

Robust design for high-power, high-temperature applications

Compact surface mount package for space-constrained designs

Proven reliability and performance in a wide range of applications